BLW96 RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor RF
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| Price from: | 86.00 $ |
| Prices are approximate and are indebted to the time of inclusion in the product catalog. | |
Description:BLW96 RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor RFThe BLW96 RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor RF is a cutting-edge electronic component designed for high-frequency applications. With its advanced metal oxide semiconductor technology, this transistor offers superior performance and reliability in RF circuitry. Whether you're working on radio frequency amplifiers, oscillators, or other RF systems, the BLW96 RF MOSFET Transistor RF is the perfect choice to enhance your designs. Featuring a high power gain and low noise figure, this transistor ensures efficient signal amplification while minimizing unwanted noise. Its robust construction and high breakdown voltage make it suitable for demanding RF applications that require high power output. The BLW96 RF MOSFET Transistor RF also exhibits excellent thermal stability, ensuring reliable operation even in extreme temperature conditions. With its compact size and easy integration, this transistor is a versatile solution for a wide range of RF designs. Its compatibility with various circuit configurations and low input capacitance make it ideal for high-frequency switching applications. Whether you're an experienced RF engineer or a hobbyist, the BLW96 RF MOSFET Transistor RF is a reliable and efficient component that will enhance the performance of your RF systems. |
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Burza domén | cooperate